⭕ >108

H2
103

Ultimate pressure with bake out heating
10-7 Pa (10-9 Torr)

Maximum continuous outlet pressure
660 Pa (5 Torr)

Maximum Nitrogen throughput
2500 sccm

Rated speed
48000 rpm

Starting time
4 min

Maximum inlet flange temperature
120 °C

Input voltage
100 to 120 V a.c. (± 10) or

200 to 240 V a.c. (± 10)

Power consumption
0.6 kVA

Weight

Pump
15 kg



Technology

Edwards is a leader in clean and dry vacuum technology. The first STP pumps were sold in 1983 and there are now over 80000 installations worldwide. 85% are operating on semiconductor process tools where they demonstrate exceptional levels of reliability. STP pumps are the first choice for applications demanding high up-time, hydrocarbon-free pump­ing, minimal maintenance and low vibration.


Applications

Plasma etch (chlorine, fluorine and bromine chemistries) for metal (aluminum), tungsten and dielectric (oxide) and polysilicon

Electron cyclotron resonance (ECR) etch

Film deposition CVD, PECVD, ECRCVD, MOCVD

Sputtering

Ion implantation source, beam line pumping end station

MBE

Diffusion

Photo resist stripping

Crystal/epitaxial growth

Wafer inspection

Load lock chambers

Scientific instruments: surface analysis, mass spectrometry, electron microscopy

High energy physics: beam lines, accelerators

Radioactive applications: fusion systems, cyclotrons